| Ingxenye | 99.9999% | Iyunithi |
| I-oksijini (Ar) | ≤0.1 | i-ppmV |
| I-nitrogen | ≤0.1 | i-ppmV |
| I-hydrogen | ≤20 | i-ppmV |
| I-Helium | ≤10 | i-ppmV |
| I-CO+CO2 | ≤0.1 | i-ppmV |
| I-THC | ≤0.1 | i-ppmV |
| Ama-Chlorosilane | ≤0.1 | i-ppmV |
| I-Disiloxane | ≤0.1 | i-ppmV |
| I-Disilane | ≤0.1 | i-ppmV |
| Umswakama (H2O) | ≤0.1 | i-ppmV |
I-Silane iyinhlanganisela ye-silicon ne-hydrogen. Yigama elijwayelekile lochungechunge lwezakhi, okuhlanganisa i-monosilane (SiH4), i-disilane (Si2H6) kanye nezinye izakhi ze-silicon-hydrogen ezisezingeni eliphezulu. Phakathi kwazo, i-monosilane iyona evame kakhulu, ngezinye izikhathi ebizwa ngokuthi i-silane ngamafuphi. I-Silane iyigesi engenambala enephunga elibi likagalikhi. Incibilika emanzini, cishe ayincibiliki ku-ethanol, i-ether, i-benzene, i-chloroform, i-silicon chloroform kanye ne-silicon tetrachloride. Izakhiwo zamakhemikhali ze-silane zisebenza kakhulu kune-alkanes futhi zi-oxidized kalula. Ukushisa okuzenzekelayo kungenzeka uma kuthintana nomoya. Ayisabelani ne-nitrogen engaphansi kwama-25°C, futhi ayisabelani namakhemikhali e-hydrocarbon ekushiseni kwegumbi. Umlilo nokuqhuma kwe-silane kuwumphumela wokusabela ne-oxygen. I-Silane izwela kakhulu ku-oxygen nasemoyeni. I-Silane enokugxila okuthile izosabela futhi ngamandla ne-oxygen ekushiseni okungu--180°C. I-Silane isibe yigesi ekhethekile ebaluleke kakhulu esetshenziswa ezinqubweni ze-semiconductor microelectronics, futhi isetshenziswa ekulungiseleleni amafilimu ahlukahlukene e-microelectronic, okuhlanganisa amafilimu e-single crystal, i-microcrystalline, i-polycrystalline, i-silicon oxide, i-silicon nitride, kanye ne-metal silicides. Ukusetshenziswa kwe-microelectronic kwe-silane kusathuthuka ngokujulile: i-epitaxy yokushisa okuphansi, i-epitaxy ekhethiwe, kanye ne-heteroepitaxial epitaxy. Hhayi kuphela kumadivayisi e-silicon kanye namasekethe ahlanganisiwe e-silicon, kodwa futhi nakumadivayisi e-compound semiconductor (gallium arsenide, i-silicon carbide, njll.). Iphinde ibe nezicelo ekulungiseleleni izinto ze-superlattice quantum well. Kungashiwo ukuthi i-silane isetshenziswa cishe kuzo zonke imigqa yokukhiqiza yesekethe ehlanganisiwe ethuthukisiwe ezikhathini zanamuhla. Ukusetshenziswa kwe-silane njengefilimu ne-coating equkethe i-silicon kuye kwanda kusuka embonini ye-microelectronics yendabuko kuya emikhakheni ehlukahlukene njengensimbi, imishini, amakhemikhali kanye ne-optics. Okunye ukusetshenziswa kwe-silane okungaba khona ukukhiqizwa kwezingxenye zenjini ye-ceramic esebenza kahle kakhulu, ikakhulukazi ukusetshenziswa kwe-silane ukukhiqiza i-silicide (Si3N4, SiC, njll.) ubuchwepheshe be-micropowder budonsele ukunaka okwengeziwe.
①E-elekthronikhi:
I-Silane isetshenziswa ezingqimbeni ze-silicon ze-polycrystalline kuma-wafer e-silicon lapho kukhiqizwa ama-semiconductor, kanye nama-sealant.
②Ilanga:
I-Silane isetshenziswa ekukhiqizweni kwemodyuli ye-photovoltaic yelanga.
③Ezezimboni:
Isetshenziswa kwiGlasi Eluhlaza Eyonga Amandla futhi isetshenziswa enqubweni yefilimu encane yokufaka umhwamuko.
| Umkhiqizo | Uketshezi lwe-Silane SiH4 | |
| Usayizi Wephakheji | Isilinda esingu-47Ltr | Y-440L |
| Ukugcwalisa Isisindo Esiphelele/Isilinda | Amakhilogremu angu-10 | 125Kgs |
| UBUNINGI Kulayishwe ku-20'Container | Ama-Cyls angu-250 | Ama-Cyls angu-8 |
| Isisindo Esiphelele | Amathani angu-2.5 | Ithani eli-1 |
| Isisindo se-Cylinder Tare | 52Kgs | 680Kgs |
| Ivalvu | CGA632/DISS632 | |
①Iminyaka engaphezu kweyishumi emakethe;
②Umkhiqizi wesitifiketi se-ISO;
③Ukulethwa okusheshayo;
④Umthombo wezinto zokusetshenziswa eziqinile;
⑤Uhlelo lokuhlaziya oluku-inthanethi lokulawula ikhwalithi kuzo zonke izinyathelo;
⑥Isidingo esiphezulu kanye nenqubo ecophelelayo yokuphatha isilinda ngaphambi kokugcwalisa;
⑦Ubumsulwa: izinga eliphezulu le-elekthronikhi lokuhlanzeka;
⑧Ukusetshenziswa: izinto zamaseli elanga; ukwenza i-polysilicon emsulwa kakhulu, i-silicon oxide kanye ne-optical fiber; ukukhiqizwa kwengilazi enemibala.