Ukucaciswa | 99.999% |
I-Oxygen+Argon | ≤1ppm |
I-nitrogen | ≤4 ppm |
Umswakama(H2O) | ≤3 ppm |
HF | ≤0.1 ppm |
CO | ≤0.1 ppm |
CO2 | ≤1 ppm |
SF6 | ≤1 ppm |
AmaHalocarbynes | ≤1 ppm |
Ukungcola Okuphelele | ≤10 ppm |
I-Carbon tetrafluoride iyi-halogenated hydrocarbon enefomula yamakhemikhali i-CF4.Ingathathwa njenge-halogenated hydrocarbon, i-halogenated methane, i-perfluorocarbon, noma njengenhlanganisela ye-inorganic.I-Carbon tetrafluoride iyigesi engenambala nengenaphunga, ayincibiliki emanzini, encibilika ku-benzene ne-chloroform.Izinzile ngaphansi kwezinga lokushisa elivamile nokucindezela, gwema ama-oxidants aqinile, izinto ezivuthayo noma ezivuthayo.Igesi engashi, ukucindezela kwangaphakathi kwesiqukathi kuzokhula lapho kuvezwa ukushisa okuphezulu, futhi kunengozi yokuqhekeka nokuqhuma.Iqinile kumakhemikhali futhi ayishi.I-reagent yensimbi ye-ammonia-sodium kuphela engasebenza ekamelweni lokushisa.I-Carbon tetrafluoride iyigesi ebangela umphumela we-greenhouse.Izinzile kakhulu, ingahlala emkhathini isikhathi eside, futhi iyigesi ebamba ukushisa enamandla kakhulu.I-Carbon tetrafluoride isetshenziswa kunqubo yokufaka i-plasma yamasekethe ahlukahlukene ahlanganisiwe.Ibuye isetshenziswe njengegesi ye-laser, futhi isetshenziswa eziqandisini ezinezinga lokushisa eliphansi, izinto ezincibilikisayo, izinto zokugcoba, izinto zokuvikela ukushisa, kanye nezinto ezipholisa amafu emithonjeni ye-infrared.Yigesi esetshenziswa kakhulu ye-plasma etching embonini ye-microelectronics.Kuyingxube yegesi ye-tetrafluoromethane ene-high-purity kanye ne-tetrafluoromethane high-purity gas kanye ne-high-purity oxygen.Ingasetshenziswa kabanzi ku-silicon, i-silicon dioxide, i-silicon nitride, nengilazi ye-phosphosilicate.Ukufakwa kwezinto zefilimu ezacile njenge-tungsten ne-tungsten nakho kusetshenziswa kabanzi ekuhlanzeni okungaphezulu kwezinto zikagesi, ukukhiqizwa kwamaseli elanga, ubuchwepheshe be-laser, isiqandisi esisezingeni eliphansi lokushisa, ukuhlolwa kokuvuza, kanye nokuhlanza ekukhiqizeni isekethe ephrintiwe.Isetshenziswa njengesiqandisi esinezinga lokushisa eliphansi kanye nobuchwepheshe bokufaka okomile be-plasma kumasekhethi ahlanganisiwe.Izinyathelo zokuphepha zokugcina: Gcina endaweni epholile, engenamoya engashi.Gcina kude nomlilo nemithombo yokushisa.Izinga lokushisa lokugcina akufanele lidlule ku-30°C.Kufanele igcinwe ngokuhlukana nezinto ezivuthayo kalula (ezivuthayo) kanye nama-oxidants, futhi igweme ukugcinwa okuxubile.Indawo yokugcina kufanele ifakwe okokusebenza okuphuthumayo okuvuzayo.
① Isiqandisi:
I-Tetrafluoromethane ngezinye izikhathi isetshenziswa njengesiqandisi esiphansi sokushisa.
② Ukufaka:
Isetshenziswa ku-electronics microfabrication iyodwa noma ihlanganiswe nomoya-mpilo njenge-plasma etchant ye-silicon, i-silicon dioxide, ne-silicon nitride.
Umkhiqizo | I-Carbon TetrafluorideCF4 | ||
Usayizi Wephakheji | 40Ltr Isilinda | 50Ltr Isilinda | |
Ukugcwalisa Isisindo Esiphelele/Cyl | 30Kgs | 38kgs | |
I-QTY Ilayishwe ku-20'Container | 250 Cyls | 250 Cyls | |
Ingqikithi Yesisindo | 7.5 amathani | 9.5 amathani | |
Isisindo se-Cylinder Tare | 50Kgs | 55Kgs | |
Ivalvu | I-CGA 580 |
①Ukuhlanzeka okuphezulu, indawo yakamuva;
②ISO umenzi wesitifiketi;
③Ukulethwa okusheshayo;
④Isistimu yokuhlaziya eku-inthanethi yokulawula ikhwalithi kuso sonke isinyathelo;
⑤Imfuneko ephezulu kanye nenqubo ecophelelayo yokuphatha isilinda ngaphambi kokugcwalisa;