Ubuchwepheshe bokufaka okomile bungenye yezinqubo ezibalulekile. I-Dry etching gas iyinto esemqoka ekwenziweni kwe-semiconductor kanye nomthombo obalulekile wegesi wokufakwa kwe-plasma. Ukusebenza kwayo kuthinta ngqo ikhwalithi nokusebenza komkhiqizo wokugcina. Lesi sihloko sabelana kakhulu ngokuthi yimaphi amagesi etching asetshenziswa kakhulu enqubweni yokuqopha okomile.
Amagesi asekelwe ku-fluorine: njengei-carbon tetrafluoride (CF4), i-hexafluoroethane (C2F6), i-trifluoromethane (CHF3) ne-perfluoropropane (C3F8). Lawa magesi angakhiqiza ngempumelelo ama-fluoride aguquguqukayo lapho ehlanganisa i-silicon ne-silicon compounds, ngaleyo ndlela afeze ukususwa kwezinto.
Amagesi asekelwe ku-chlorine: njenge-chlorine (Cl2),i-boron trichloride (BCl3)kanye ne-silicon tetrachloride (SiCl4). Amagesi asekelwe ku-chlorine anganikeza ama-ion e-chloride phakathi nenqubo yokuhlanganisa, esiza ukuthuthukisa izinga lokushaya kanye nokukhetha.
Amagesi asuselwa ku-Bromine: njenge-bromine (Br2) ne-bromine iodide (IBr). Amagesi asuselwa ku-Bromine angahlinzeka ngokusebenza okungcono kakhulu kwe-etching ezinqubweni ezithile zokuqopha, ikakhulukazi lapho unamathisela izinto eziqinile njenge-silicon carbide.
Amagesi asekelwe ku-nitrogen namagesi asekelwe kumoya-mpilo: njenge-nitrogen trifluoride (NF3) ne-oxygen (O2). Lawa magesi ajwayele ukusetshenziselwa ukulungisa izimo zokusabela enqubweni yokuqopha ukuze kuthuthukiswe ukukhetha kanye nokuqondiswa kwe-etching.
Lawa magesi afinyelela ukuqoshwa okunembile kwendawo ebonakalayo ngokusebenzisa inhlanganisela yokufafaza komzimba nokusabela kwamakhemikhali ngesikhathi sokuqoshwa kwe-plasma. Ukukhethwa kwegesi yokushumeka kuncike ohlotsheni lwento okufanele ishuthwe, izidingo zokukhetha zokushumeka, kanye nezinga lokunamathisela elifunekayo.
Isikhathi sokuthumela: Feb-08-2025
