Epitaxial (ukukhula)I-GA exubiles

Emkhakheni we-semiconductor, igesi esetshenziselwa ukukhulisa eyodwa noma ngaphezulu kwezendlalelo zezinto ezibonakalayo ngamakhemikhali we-Vapor devin esihlokweni esikhethwe ngokucophelela ibizwa ngokuthi i-Epitaxial Gas.

Amagesi we-silicon epitaxial asetshenziswa kakhulu afaka i-dicchorosilane, i-silicon tetrachloride kanyeowesifazane. Ngokuyinhloko esetshenziselwa ukufakwa kwe-epitaxial silicon, ukufakwa kwamafilimu we-siliconic oxide, amafilimu e-silicon nitride, ama-photoron silicon amafilimu amaseli elanga, njll. Epitaxy inqubo lapho kufakwa khona impahla eyodwa.

I-Chemical Vapor Deposition (CVD) igesi exubile

I-CVD yindlela yokufaka izinto ezithile kanye nezinhlanganisela ngokuphendula kwamakhemikhali wegesi usebenzisa amakhompiyutha aguqukayo, okungukuthi, indlela eyakhayo yefilimu esebenzisa ukusabela kwamakhemikhali wegesi. Ngokuya ngohlobo lwefilimu eyakhiwe, igesi yamakhemikhali (CVD) esetshenzisiwe nayo ihlukile.

UkuhlatshwaIgesi exubile

Ekwenziweni kwamadivayisi we-semiconductor kanye nemibuthano ehlanganisiwe, ukungcola okuthile kudonswa ezintweni ze-semiconductor ukunikeza izinto zokwenza izinto ezidingekayo, izingxenye ezithile zokulwa negesi, njll. Igesi esetshenzisiwe kwinqubo ye-doping ibizwa ngokuthi yi-doping igesi.

Kubandakanya ikakhulukazi i-arsine, i-phosphine, i-phosphorus trifluide, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluide,boron trifluoride, Diborane, njll.

Imvamisa, umthombo we-doping uxutshwe negesi yenethiwekhi (njenge-argon ne-nitrogen) kwikhabethe lomthombo. Ngemuva kokuxubana, ukugeleza kwegesi kuyaqhubeka kufakwa esithandweni somlilo futhi kuzungeze ubukhazikhazi, bese kufakwa izithonjana ezingaphezulu kobuso be-wafer, bese besabela nge-silicon ukukhiqiza izinsimbi ezingenayo ezihamba nge-silico.

UkufakaIngxube yegesi

I-Etching is is is i-etch i-etch ebusweni (njengefilimu yensimbi, ifilimu ye-siliconi oxide, njll.) Ku-substrate ngaphandle komaski we-Photoresist, ngenkathi igcina indawo enesimo sokumaski, ukuze ithole indawo edingekayo yokucabanga edingekayo endaweni engezansi.

Izindlela zoku-Etching zifaka i-WET Chemical Etching kanye ne-chemical tching eyomile. Igesi esetshenziswe ku-ched chemic etching ibizwa ngokuthi i-etching gesi.

Igesi e-etching ivame ukugcwala igesi (halide), njengeI-Carbon Tetrafluoride, i-nitrogen trifluoride, trifluoromenethane, hexafluoropane, njl.