I-Epitaxial (ukukhula)Okuxubile Gas

Embonini ye-semiconductor, igesi esetshenziselwa ukukhulisa ungqimba olulodwa noma ngaphezulu kwezinto ngokufakwa komhwamuko wamakhemikhali ku-substrate ekhethwe ngokucophelela ibizwa ngokuthi i-epitaxial gas.

Amagesi e-silicon epitaxial asetshenziswa kakhulu afaka i-dichlorosilane, i-silicon tetrachloride kanyesilane. Isetshenziselwa ikakhulukazi i-epitaxial silicon deposition, i-silicon oxide deposition film, i-silicon nitride film deposition, i-amorphous silicon film deposition yamaseli elanga namanye ama-photoreceptors, njll. I-Epitaxy iyinqubo lapho kufakwa khona into eyodwa yekristalu futhi ikhule phezu kwe-substrate.

I-Chemical Vapor Deposition (CVD) I-Mixed Gas

I-CVD iyindlela yokufaka izakhi ezithile nezinhlanganisela ngokusabela kwamakhemikhali esigaba segesi kusetshenziswa izinhlanganisela eziguquguqukayo, okungukuthi, indlela yokwenza ifilimu kusetshenziswa ukusabela kwamakhemikhali esigaba segesi. Kuye ngohlobo lwefilimu eyakhiwe, igesi ye-chemical vapor deposition (CVD) esetshenzisiwe nayo ihlukile.

I-DopingI-Mix Gas

Ekwenziweni kwamadivayisi we-semiconductor namasekethe ahlanganisiwe, ukungcola okuthile kufakwa ezintweni ze-semiconductor ukuze kunikezwe izinto ezidingekayo uhlobo lwe-conductivity oludingekayo kanye nokumelana okuthile kokukhiqiza izinto eziphikisayo, ukuhlangana kwe-PN, izendlalelo ezingcwatshiwe, njll. Igesi esetshenziswa enqubweni ye-doping ibizwa ngokuthi i-doping gas.

Ikakhulukazi ihlanganisa i-arsine, i-phosphine, i-phosphorus trifluoride, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluoride,i-boron trifluoride, diborane, njll.

Ngokuvamile, umthombo we-doping uxutshwa negesi yenethiwekhi (efana ne-argon ne-nitrogen) kukhabhinethi yomthombo. Ngemuva kokuxubana, ukugeleza kwegesi kufakwa ngokuqhubekayo esithandweni sokusabalalisa futhi kuzungeze isicwecwe, kubeke ama-dopants ebusweni be-wafer, bese kusabela nge-silicon ukuze kukhiqizwe izinsimbi ezifakwe emanzini ezithuthela ku-silicon.

EtchingIngxube Yegesi

I-Etching iwukucisha indawo yokucubungula (efana nefilimu yensimbi, ifilimu ye-silicon oxide, njll.) ku-substrate ngaphandle kokufihla i-photoresist, kuyilapho ulondoloza indawo nge-photoresist masking, ukuze kutholwe iphethini yesithombe edingekayo endaweni engaphansi.

Izindlela ze-etching zihlanganisa ukucwiliswa kwamakhemikhali amanzi kanye ne-chemical etching eyomile. Igesi esetshenziswa ekufakweni kwamakhemikhali okomile ibizwa ngokuthi i-etching gas.

I-etching gas ngokuvamile igesi ye-fluoride (halide), njengeI-carbon tetrafluoride, i-nitrogen trifluoride, i-trifluoromethane, i-hexafluoroethane, i-perfluoropropane, njll.