I-Epitaxial (ukukhula)I-Ga Exubiles

Embonini ye-semiconductor, igesi esetshenziswa ukukhulisa ungqimba olulodwa noma ngaphezulu lwezinto ngokufaka umusi wamakhemikhali endaweni ekhethiwe ngokucophelela ibizwa ngokuthi i-epitaxial gas.

Amagesi e-silicon epitaxial asetshenziswa kakhulu ahlanganisa i-dichlorosilane, i-silicon tetrachloride kanyei-silaneIsetshenziswa kakhulu ekufakweni kwe-epitaxial silicon, ukufakwa kwefilimu ye-silicon oxide, ukufakwa kwefilimu ye-silicon nitride, ukufakwa kwefilimu ye-silicon engaguquki yamaseli elanga kanye namanye ama-photoreceptor, njll. I-Epitaxy inqubo lapho kufakwa khona into eyodwa yekristalu futhi ikhule phezu kwe-substrate.

Igesi Exubile Yokudonswa Komusi Wekhemikhali (i-CVD)

I-CVD iyindlela yokufaka izakhi ezithile kanye nama-compounds ngokusebenzisa ukusabela kwamakhemikhali kwesigaba segesi kusetshenziswa ama-volatile compounds, okungukuthi, indlela yokwenza ifilimu kusetshenziswa ukusabela kwamakhemikhali kwesigaba segesi. Kuye ngohlobo lwefilimu eyakhiwe, igesi ye-chemical vapor deposition (CVD) esetshenziswayo nayo ihlukile.

Ukuphuza izidakamizwaIgesi Exubile

Ekwenziweni kwamadivayisi e-semiconductor kanye namasekethe ahlanganisiwe, ukungcola okuthile kufakwa ezintweni ze-semiconductor ukuze kunikezwe izinto uhlobo lokuqhuba oludingekayo kanye nokumelana okuthile kokukhiqiza ama-resistor, ama-PN junctions, izendlalelo ezingcwatshwe, njll. Igesi esetshenziswa enkambisweni yokusebenzisa i-doping ibizwa ngokuthi i-doping gas.

Ikakhulukazi ihlanganisa i-arsine, i-phosphine, i-phosphorus trifluoride, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluoride,i-boron trifluoride, i-diborane, njll.

Ngokuvamile, umthombo we-doping uxutshwa negesi ethwalayo (njenge-argon ne-nitrogen) ekhabetheni lomthombo. Ngemva kokuxuba, ukugeleza kwegesi kufakwa njalo esithandweni sokusabalalisa futhi kuzungeze i-wafer, kufakwe ama-dopants ebusweni be-wafer, bese kusabela ne-silicon ukuze kukhiqizwe izinsimbi ezifakwe ama-doped ezithuthela ku-silicon.

UkuqophaIngxube Yegesi

Ukuqopha kuwukuqopha indawo yokucubungula (njengefilimu yensimbi, ifilimu ye-silicon oxide, njll.) ku-substrate ngaphandle kokufihla i-photoresist, ngenkathi kulondolozwa indawo nge-photoresist masking, ukuze kutholakale iphethini yokuthwebula edingekayo ku-substrate.

Izindlela zokuqopha zifaka phakathi ukuqopha ngamakhemikhali okumanzi kanye nokuqopha ngamakhemikhali okomile. Igesi esetshenziswa ekuqopheni ngamakhemikhali okomile ibizwa ngokuthi igesi yokuqopha.

Igesi yokuqopha ngokuvamile igesi ye-fluoride (i-halide), njengei-tetrafluoride yekhabhoni, i-nitrogen trifluoride, i-trifluoromethane, i-hexafluoroethane, i-perfluoropropane, njll.