Ukucaciswa | 99.999% |
I-Oxygen+Argon | ≤1ppm |
I-nitrogen | ≤4 ppm |
Umswakama(H2O) | ≤3 ppm |
HF | ≤0.1 ppm |
CO | ≤0.1 ppm |
CO2 | ≤1 ppm |
SF6 | ≤1 ppm |
AmaHalocarbynes | ≤1 ppm |
Ukungcola Okuphelele | ≤10 ppm |
I-Carbon tetrafluoride iyi-halogenated hydrocarbon enefomula yamakhemikhali i-CF4. Ingathathwa njenge-halogenated hydrocarbon, i-halogenated methane, i-perfluorocarbon, noma njengenhlanganisela ye-inorganic. I-Carbon tetrafluoride iyigesi engenambala nengenaphunga, ayincibiliki emanzini, encibilika ku-benzene ne-chloroform. Izinzile ngaphansi kwezinga lokushisa elivamile nokucindezela, gwema ama-oxidants aqinile, izinto ezivuthayo noma ezivuthayo. Igesi engashi, ukucindezela kwangaphakathi kwesiqukathi kuzokwanda lapho kuvezwa ukushisa okuphezulu, futhi kunengozi yokuqhekeka nokuqhuma. Iqinile kumakhemikhali futhi ayishi. I-reagent yensimbi ye-ammonia-sodium kuphela engasebenza ekamelweni lokushisa. I-Carbon tetrafluoride iyigesi ebangela umphumela we-greenhouse. Izinzile, ingahlala emkhathini isikhathi eside, futhi iyigesi ebamba ukushisa enamandla kakhulu. I-Carbon tetrafluoride isetshenziswa kunqubo yokufaka i-plasma yamasekethe ahlukahlukene ahlanganisiwe. Ibuye isetshenziswe njengegesi ye-laser, futhi isetshenziswa eziqandisini ezinezinga lokushisa eliphansi, izinto ezincibilikisayo, izinto zokugcoba, izinto zokuvikela ukushisa, kanye nezinto ezipholisa amafu emithonjeni ye-infrared. Yigesi esetshenziswa kakhulu ye-plasma etching embonini ye-microelectronics. Kuyingxube yegesi ye-tetrafluoromethane ene-high-purity kanye ne-tetrafluoromethane high-purity gas kanye ne-high-purity oxygen. Ingasetshenziswa kabanzi ku-silicon, i-silicon dioxide, i-silicon nitride, nengilazi ye-phosphosilicate. Ukufakwa kwezinto zefilimu ezacile njenge-tungsten ne-tungsten nakho kusetshenziswa kabanzi ekuhlanzeni okungaphezulu kwezinto zikagesi, ukukhiqizwa kwamaseli elanga, ubuchwepheshe be-laser, isiqandisi esisezingeni eliphansi lokushisa, ukuhlolwa kokuvuza, kanye nokuhlanza ekukhiqizeni isekethe ephrintiwe. Isetshenziswa njengesiqandisi esinezinga lokushisa eliphansi kanye nobuchwepheshe bokufaka okomile be-plasma kumasekhethi ahlanganisiwe. Izinyathelo zokuphepha zokugcina: Gcina endaweni epholile, engenamoya engashi. Gcina kude nomlilo nemithombo yokushisa. Izinga lokushisa lokugcina akufanele lidlule ku-30°C. Kufanele igcinwe ngokuhlukana nezinto ezikwazi ukuvutha kalula (ezivuthayo) kanye nama-oxidants, futhi igweme ukugcinwa okuxubile. Indawo yokugcina kufanele ifakwe okokusebenza okuphuthumayo okuvuzayo.
① Isiqandisi:
I-Tetrafluoromethane ngezinye izikhathi isetshenziswa njengesiqandisi esiphansi sokushisa.
② Ukufaka:
Isetshenziswa ku-electronics microfabrication iyodwa noma ihlanganiswe nomoya-mpilo njenge-plasma etchant ye-silicon, i-silicon dioxide, ne-silicon nitride.
Umkhiqizo | I-Carbon TetrafluorideCF4 | ||
Usayizi Wephakheji | 40Ltr Isilinda | 50Ltr Isilinda | |
Ukugcwalisa Isisindo Esiphelele/Cyl | 30Kgs | 38kgs | |
I-QTY Ilayishwe ku-20'Container | 250 Cyls | 250 Cyls | |
Ingqikithi Yesisindo | 7.5 amathani | 9.5 amathani | |
Isisindo se-Cylinder Tare | 50Kgs | 55Kgs | |
Ivalvu | I-CGA 580 |
①Ukuhlanzeka okuphezulu, indawo yakamuva;
②ISO umenzi wesitifiketi;
③Ukulethwa okusheshayo;
④Isistimu yokuhlaziya eku-inthanethi yokulawula ikhwalithi kuso sonke isinyathelo;
⑤Isidingo esiphezulu kanye nenqubo yokucophelela yokuphatha isilinda ngaphambi kokugcwalisa;