Indima ye-sulphur hexafluoride ku-silicon nitride etching

I-sulphur hexafluoride iyigesi enezinto ezinhle kakhulu zokuvikela futhi ivame ukusetshenziswa ekucimeni kwe-arc ephezulu yamandla kanye nama-transformers, izintambo zokudlulisa amandla aphezulu, ama-transformer, njll. Nokho, ngaphezu kwale misebenzi, i-sulphur hexafluoride ingasetshenziswa futhi njenge-electronic etchant. . I-Electronic grade high-purity sulfur hexafluoride iyi-electronic etchant ekahle, esetshenziswa kabanzi emkhakheni wobuchwepheshe be-microelectronics. Namuhla, umhleli wegesi okhethekile we-Niu Ruide u-Yueyue uzokwethula ukusetshenziswa kwe-sulphur hexafluoride ku-silicon nitride etching kanye nomthelela wamapharamitha ahlukene.

Sixoxa ngenqubo ye-SF6 ye-plasma etching SiNx, okuhlanganisa ukushintsha amandla e-plasma, isilinganiso segesi se-SF6/He kanye nokwengeza igesi ye-cationic O2, sidingida ithonya layo esilinganisweni sokufaka ungqimba lokuvikelwa kwesici se-SiNx se-TFT, nokusebenzisa imisebe ye-plasma i-spectrometer ihlaziya izinguquko zokugxilisa ingqondo zohlobo ngalunye ku-SF6/He, SF6/He/O2 plasma kanye nenani lokuhlukaniswa kwe-SF6, futhi ihlola ubudlelwano phakathi koshintsho lwezinga le-SiNx etching kanye nokugxila kwezinhlobo ze-plasma.

Ucwaningo luye lwathola ukuthi lapho amandla e-plasma ekhuphuka, izinga lokushaya liyakhula; uma izinga lokugeleza kwe-SF6 ku-plasma lenyuswa, ukuhlushwa kwe-athomu ye-F kuyanda futhi kuhlotshaniswa kahle nezinga lokuqopha. Ngaphezu kwalokho, ngemva kokwengeza igesi ye-cationic O2 ngaphansi kwenani elilinganiselwe lokugeleza okuphelele, lizoba nomthelela wokwandisa izinga lokunamathisela, kodwa ngaphansi kwezilinganiso ezihlukene zokugeleza kwe-O2/SF6, kuzoba nezinqubo ezahlukene zokusabela, ezingahlukaniswa zibe izingxenye ezintathu. : (1 ) Isilinganiso sokugeleza kwe-O2/SF6 sincane kakhulu, i-O2 ingasiza ukuhlukaniswa kwe-SF6, futhi izinga lokushaya ngalesi sikhathi likhulu kunalapho i-O2 ingangeziwe. (2) Uma isilinganiso sokugeleza kwe-O2/SF6 sikhulu kuno-0.2 esikhaleni esisondela ku-1, ngalesi sikhathi, ngenxa yenani elikhulu lokuhlukaniswa kwe-SF6 ukuze enze ama-athomu ka-F, izinga lokunamathisela liphakeme kakhulu; kodwa ngesikhathi esifanayo, ama-athomu e-O ku-plasma nawo ayanda futhi Kulula ukwakha i-SiOx noma i-SiNxO(yx) ngefilimu ye-SiNx, futhi lapho ama-athomu e-O enyuka, ama-athomu ka-F azoba nzima nakakhulu ukusabela etching. Ngakho-ke, izinga lokushaya liqala ukwehla lapho isilinganiso se-O2/SF6 siseduze no-1. (3) Uma isilinganiso se-O2/SF6 sikhulu kuno-1, izinga lokunamathisela liyehla. Ngenxa yokwanda okukhulu kwe-O2, ama-athomu ka-F ahlukanisiwe angqubuzana ne-O2 kanye nohlobo lwe-OF, okunciphisa ukugcwala kwama-athomu F, okuholela ekwehleni kwezinga lokucwiliswa. Kungabonakala kulokhu ukuthi uma i-O2 yengezwa, isilinganiso sokugeleza kwe-O2/SF6 siphakathi kuka-0.2 no-0.8, futhi izinga lokushaya elingcono kakhulu lingatholakala.