Amagesi akhethekileihluke kokujwayelekileamagesi ezimboningokuthi anokusetshenziswa okukhethekile futhi asetshenziswa emikhakheni ethile. Anezidingo ezithile zokuhlanzeka, okuqukethwe ukungcola, ukwakheka, kanye nezakhiwo zomzimba namakhemikhali. Uma kuqhathaniswa namagesi ezimboni, amagesi akhethekile ahlukene kakhulu ngezinhlobonhlobo kodwa anenani elincane lokukhiqiza nokuthengisa.

Iamagesi axubilefuthiamagesi okulinganisa ajwayelekileesivame ukuzisebenzisa ziyizingxenye ezibalulekile zamagesi akhethekile. Amagesi axubile avame ukuhlukaniswa abe amagesi axubile ajwayelekile kanye namagesi axubile kagesi.

Amagesi axubile ajwayelekile ahlanganisa:igesi exutshwe nge-laser, ukutholwa kwegesi igesi exutshiwe, igesi exutshiwe yokushisela, ukulondolozwa kwegesi exutshiwe, umthombo wokukhanya kagesi oxubile, igesi exutshiwe yocwaningo lwezokwelapha nebhayoloji, igesi exutshiwe yokubulala amagciwane nokubulala inzalo, igesi exutshiwe ye-alamu yensimbi, igesi exutshwe nomfutho ophezulu, nomoya wezinga eliyiziro.

Izingxube zegesi ye-elekthronikhi zihlanganisa izingxube zegesi ye-epitaxial, izingxube zegesi yokubeka umhwamuko wamakhemikhali, izingxube zegesi yedoping, izingxube zegesi etching, nezinye izingxube zegesi kagesi. Lezi zingxube zegesi zidlala indima ebalulekile embonini ye-semiconductor kanye ne-microelectronics futhi zisetshenziswa kabanzi kusekethe enkulu ehlanganisiwe (LSI) kanye nokukhiqizwa kwesekethe enkulu ehlanganisiwe (VLSI), kanye nasekukhiqizeni idivayisi ye-semiconductor.

5 Izinhlobo zamagesi axubile kagesi yizona ezisetshenziswa kakhulu

Doping igesi exubile

Ekwenziweni kwamadivayisi we-semiconductor namasekethe ahlanganisiwe, ukungcola okuthile kungeniswa ezintweni ezisetshenziswayo ze-semiconductor ukuze kudluliselwe ukuqhutshwa okufunwayo nokumelana, okuvumela ukwakhiwa kwama-resistors, ama-PN junctions, izendlalelo ezingcwatshiwe, nezinye izinto. Amagesi asetshenziswa ohlelweni lwe-doping abizwa ngokuthi ama-dopant gases. Lawa magesi ngokuyinhloko ahlanganisa i-arsine, i-phosphine, i-phosphorus trifluoride, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluoride,i-boron trifluoride, kanye ne-diborane. Umthombo we-dopant ngokuvamile uxutshwa negesi yenkampani yenethiwekhi (efana ne-argon ne-nitrogen) kukhabhinethi yomthombo. Igesi exutshiwe ibe isijova ngokuqhubekayo esithandweni sokusakaza bese izungeza i-wafer, ifake i-dopant endaweni eyi-wafer. I-dopant bese isabela ne-silicon ukuze yakhe insimbi ye-dopant ethuthela ku-silicon.

Ingxube yegesi yokukhula kwe-Epitaxial

Ukukhula kwe-Epitaxial kuyinqubo yokufaka nokukhulisa into eyodwa yekristalu endaweni engaphansi. Embonini ye-semiconductor, amagesi asetshenziselwa ukukhulisa ungqimba olulodwa noma ngaphezulu kwezinto kusetshenziswa i-chemical vapor deposition (CVD) ku-substrate ekhethwe ngokucophelela abizwa ngokuthi ama-epitaxial gases. Amagesi ajwayelekile e-silicon epitaxial afaka i-dihydrogen dichlorosilane, i-silicon tetrachloride, ne-silane. Ngokuyinhloko zisetshenziselwa i-epitaxial silicon deposition, polycrystalline silicon deposition, silicon oxide film deposition, silicon nitride film deposition, kanye nokufakwa kwefilimu ye-amorphous silicon kumaseli elanga namanye amadivaysi e-photosensitive.

Igesi yokufakelwa kwe-ion

Kudivayisi ye-semiconductor kanye nokukhiqizwa kwesekethe edidiyelwe, amagesi asetshenziswa enqubweni yokufakelwa kwe-ion abizwa ngokuhlanganyela njengamagesi okufakelwa kwe-ion. Ukungcola okwenziwe nge-ionized (okufana ne-boron, i-phosphorus, nama-arsenic ions) asheshiselwa ezingeni eliphezulu lamandla ngaphambi kokuba afakwe ku-substrate. Ubuchwepheshe bokufakelwa kwe-ion busetshenziswa kabanzi ukulawula i-threshold voltage. Inani lokungcola okufakiwe linganqunywa ngokulinganisa i-ion beam current. Amagesi okufakwa kwe-ion ngokuvamile ahlanganisa i-phosphorus, i-arsenic, namagesi e-boron.

Ukufaka igesi exubile

I-Etching inqubo yokukhipha indawo ecutshunguliwe (njengefilimu yensimbi, ifilimu ye-silicon oxide, njll.) ku-substrate engavalwanga yi-photoresist, kuyilapho ilondoloza indawo embozwe i-photoresist, ukuze kutholwe iphethini yokuthwebula edingekayo endaweni engaphansi.

Ingxube Yegesi Ye-Chemical Vapor Deposition

I-Chemical vapor deposition (CVD) isebenzisa izinhlanganisela eziguquguqukayo ukufaka into eyodwa noma inhlanganisela ngokusebenzisa ukusabela kwamakhemikhali wesigaba somhwamuko. Lena indlela yokwenza ifilimu esebenzisa ukusabela kwamakhemikhali esigaba somhwamuko. Amagesi e-CVD asetshenziswayo ayahluka kuye ngohlobo lwefilimu elakhiwayo.