Amagesi akhethekilekuhlukile kokujwayelekileamagesi ezimboningoba anezisetshenziswa ezikhethekile futhi asetshenziswa emikhakheni ethile. Anezidingo ezithile zobumsulwa, okuqukethwe kokungcola, ukwakheka, kanye nezakhiwo zomzimba nezamakhemikhali. Uma kuqhathaniswa namagesi ezimboni, amagesi akhethekile ahlukene kakhulu ngezinhlobo kodwa anomthamo omncane wokukhiqiza kanye nokuthengisa.

Iamagesi axubilefuthiamagesi okulinganisa ajwayelekileSivame ukuzisebenzisa njengezingxenye ezibalulekile zamagesi akhethekile. Amagesi axubile avame ukuhlukaniswa abe amagesi axubile ajwayelekile kanye namagesi axubile kagesi.

Amagesi ahlanganisiwe ajwayelekile afaka:igesi exubile ye-laser, ukutholwa kwemishini igesi exubile, ukushisela igesi exubile, ukulondolozwa kwegesi exubile, umthombo wokukhanya kagesi igesi exubile, ucwaningo lwezokwelapha nolwezinto eziphilayo igesi exubile, ukubulala amagciwane kanye nokubulala amagciwane igesi exubile, i-alamu yemishini igesi exubile, igesi exubile enomfutho ophezulu, kanye nomoya ongenazinga elifanele.

Izingxube zegesi kagesi zifaka phakathi izingxube zegesi ze-epitaxial, izingxube zegesi zokufaka umhwamuko wamakhemikhali, izingxube zegesi zokusebenzisa i-doping, izingxube zegesi zokusika, kanye nezinye izingxube zegesi kagesi. Lezi zingxube zegesi zidlala indima ebalulekile embonini ye-semiconductor kanye ne-microelectronics futhi zisetshenziswa kabanzi ekukhiqizweni kwesekethe ehlanganisiwe enkulu (i-LSI) kanye nesekethe ehlanganisiwe enkulu kakhulu (i-VLSI), kanye nasekukhiqizweni kwamadivayisi e-semiconductor.

Izinhlobo ezi-5 zamagesi axubile kagesi yizona ezisetshenziswa kakhulu

Ukuxuba igesi exubile nge-doping

Ekwenziweni kwamadivayisi e-semiconductor kanye namasekethe ahlanganisiwe, ukungcola okuthile kungeniswa ezintweni ze-semiconductor ukuze kunikezwe ukuhanjiswa komoya kanye nokumelana okufiselekayo, okuvumela ukukhiqizwa kwama-resistor, ama-PN junctions, izendlalelo ezimboziwe, nezinye izinto. Amagesi asetshenziswa enkambisweni ye-doping abizwa ngokuthi amagesi e-dopant. Lawa magesi afaka kakhulu i-arsine, i-phosphine, i-phosphorus trifluoride, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluoride,i-boron trifluoride, kanye ne-diborane. Umthombo we-dopant uvame ukuhlanganiswa negesi ethwalayo (njenge-argon ne-nitrogen) ekhabetheni lomthombo. Igesi exubile ibe isifakwa njalo esithandweni sokusabalalisa bese ijikeleza i-wafer, ibeke i-dopant ebusweni be-wafer. I-dopant bese isabela ne-silicon ukuze yakhe insimbi ye-dopant ethutha iye kwi-silicon.

Ingxube yegesi yokukhula ye-Epitaxial

Ukukhula kwe-Epitaxial inqubo yokufaka nokukhulisa into eyodwa yekristalu phezu kwendawo engaphansi komhlaba. Embonini ye-semiconductor, amagesi asetshenziselwa ukukhulisa ungqimba olulodwa noma ngaphezulu lwezinto kusetshenziswa i-chemical vapor deposition (CVD) ku-substrate ekhethwe ngokucophelela abizwa ngokuthi ama-epitaxial gases. Amagesi avamile e-silicon epitaxial afaka i-dihydrogen dichlorosilane, i-silicon tetrachloride, kanye ne-silane. Asetshenziswa kakhulu ekufakweni kwe-epitaxial silicon, ukufakwa kwe-polycrystalline silicon, ukufakwa kwe-silicon oxide film, ukufakwa kwe-silicon nitride film, kanye nokufakwa kwe-amorphous silicon film kwamaseli elanga kanye namanye amadivayisi azwela ukukhanya.

Igesi yokufaka i-ion

Ekukhiqizweni kwedivayisi ye-semiconductor kanye nesekethe ehlanganisiwe, amagesi asetshenziswa enkambisweni yokufaka ama-ion abizwa ngokuthi amagesi okufaka ama-ion. Ukungcola okufakwe ama-ion (njenge-boron, i-phosphorus, nama-arsenic ions) kusheshiswa kufike ezingeni eliphezulu lamandla ngaphambi kokufakwa ku-substrate. Ubuchwepheshe bokufaka ama-ion busetshenziswa kakhulu ukulawula i-threshold voltage. Inani lokungcola okufakwe linganqunywa ngokulinganisa ugesi we-ion beam. Amagesi okufaka ama-ion ngokuvamile afaka amagesi e-phosphorus, i-arsenic, ne-boron.

Ukusika igesi exubile

Ukuqopha inqubo yokuqopha ubuso obucutshunguliwe (njengefilimu yensimbi, ifilimu ye-silicon oxide, njll.) ku-substrate engagqunywanga yi-photoresist, ngenkathi kulondolozwa indawo egqunywe yi-photoresist, ukuze kutholakale iphethini yokuthwebula edingekayo ebusweni be-substrate.

Ingxube Yegesi Yokuthuthwa Komusi Wekhemikhali

Ukufakwa komphunga wamakhemikhali (i-CVD) kusebenzisa ama-volatile compounds ukufaka into eyodwa noma i-compound ngokusebenzisa ukusabela kwamakhemikhali kwesigaba somphunga. Lena indlela yokwenza ifilimu esebenzisa ukusabela kwamakhemikhali kwesigaba somphunga. Amagesi e-CVD asetshenziswayo ayahlukahluka kuye ngohlobo lwefilimu elakhiwayo.